The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Jun. 26, 2003
Satoshi Kawasaki, Hyogo, JP;
Satoshi Kawasaki, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor memory device that can be reduced in chip area while preventing degradation in characteristic is obtained. In DRAM, a plurality of memory cell array regions are arranged in matrix, spaced apart from each other in a row direction and in a column direction, on a semiconductor substrate. A sense amplifier region is arranged in a gap between the memory cell array regions in the column direction. An element forming a sense amplifier is arranged in the sense amplifier region. A subdecoder region is arranged in a gap between the memory cell array regions in the row direction. A cross region is arranged at an intersection of the sense amplifier regions in line and the subdecoder regions in line. A sense amplifier driver element is arranged in the subdecoder region and used in a sense amplifier operation.