The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Apr. 17, 2003
David P. Bour, Cupertino, CA (US);
Michael H. Leary, Mountain View, CA (US);
Ying-lan Chang, Cupertino, CA (US);
Yoon-kyu Song, Warw ick, RI (US);
Michael R. T. Tan, Menlo Park, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Danielle Chamberlin, San Mateo, CA (US);
David P. Bour, Cupertino, CA (US);
Michael H. Leary, Mountain View, CA (US);
Ying-Lan Chang, Cupertino, CA (US);
Yoon-Kyu Song, Warw ick, RI (US);
Michael R. T. Tan, Menlo Park, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Danielle Chamberlin, San Mateo, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.