The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Mar. 22, 2000
Masashi Kawasaki, Sagamihara, JP;
Hideo Ohno, Sendai, JP;
Akira Ohtomo, Yamato, JP;
Japan Science and Technology Corp., Saitama, JP;
Abstract
The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source, a drain, a gateand a gate insulating layerare formed on the channel layerto form an FET. For a substrate, a proper material is selected depending on a thin film material of the channel layerin consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgOor the like can be used for the substrate