The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Nov. 22, 2002
David P. Bour, Cupertino, CA (US);
Ying-lan Chang, Cupertino, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Danny E. Mars, Los Altos, CA (US);
David P. Bour, Cupertino, CA (US);
Ying-Lan Chang, Cupertino, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Danny E. Mars, Los Altos, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.