The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2005

Filed:

Sep. 30, 2002
Applicants:

Marvin Farley, Ipswich, MA (US);

Takao Sakase, Rowley, MA (US);

Shu Satoh, Byfield, MA (US);

Geoffrey Ryding, Manchester, MA (US);

Peter Rose, Rockport, MA (US);

Christos Christou, West Suxex, GB;

Inventors:

Marvin Farley, Ipswich, MA (US);

Takao Sakase, Rowley, MA (US);

Shu Satoh, Byfield, MA (US);

Geoffrey Ryding, Manchester, MA (US);

Peter Rose, Rockport, MA (US);

Christos Christou, West Suxex, GB;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J037/08 ;
U.S. Cl.
CPC ...
Abstract

An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly Pfor subsequent acceleration for high energy implantation.


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