The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
May. 06, 2003
Zhenjiang Cui, San Jose, CA (US);
Rick J. Roberts, Sunnyvale, CA (US);
Michael S. Cox, Davenport, CA (US);
Jun Zhao, Cupertino, CA (US);
Khaled Elsheref, San Jose, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Zhenjiang Cui, San Jose, CA (US);
Rick J. Roberts, Sunnyvale, CA (US);
Michael S. Cox, Davenport, CA (US);
Jun Zhao, Cupertino, CA (US);
Khaled Elsheref, San Jose, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.