The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2005

Filed:

Oct. 12, 2001
Applicants:

Takeshi Nogami, Kanagawa, JP;

Naoki Komai, Kanagawa, JP;

Hideyuki Kito, Kanagawa, JP;

Mitsuru Taguchi, Tokyo, JP;

Inventors:

Takeshi Nogami, Kanagawa, JP;

Naoki Komai, Kanagawa, JP;

Hideyuki Kito, Kanagawa, JP;

Mitsuru Taguchi, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/311 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device capable of suppressing diffusion of copper at an interface between a copper wire and a cap film to enhance an electromigration resistance to ensure reliability of the copper wire, and a manufacturing method thereof are provided. The semiconductor device according to the present invention comprises an insulating film () formed on a substrate (), a concave portion () (for example, a groove) formed in the insulating film, a conductive layer () embedded in the concave portion through a barrier layer (), and a cobalt tungsten phosphorus coating () to connect with the barrier layer on the side of the conductive layer and to coat the conductive layer on the opening side of the concave portion.


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