The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Oct. 22, 2001
Yean-kuen Fang, Tainan, TW;
Ming-shanng Ju, Tainan, TW;
Jyh-jier Ho, Tainan, TW;
Gin-shin Chen, Chang-hug, TW;
Ming-chun Hsieh, Tainan, TW;
Shyh-fann Ting, Kaohsiung, TW;
Chung-hsien Yang, Tainan, TW;
Yean-Kuen Fang, Tainan, TW;
Ming-Shanng Ju, Tainan, TW;
Jyh-Jier Ho, Tainan, TW;
Gin-Shin Chen, Chang-hug, TW;
Ming-Chun Hsieh, Tainan, TW;
Shyh-Fann Ting, Kaohsiung, TW;
Chung-Hsien Yang, Tainan, TW;
National Science Council, Taipei, TW;
Abstract
There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiOthin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.