The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2005

Filed:

Sep. 17, 2003
Applicants:

Daisuke Kato, Kamakura, JP;

Takashi Taira, Yokohama, JP;

Kenji Ishizuka, Yokohama, JP;

Yohji Watanabe, Yokohama, JP;

Munehiro Yoshida, Yokohama, JP;

Inventors:

Daisuke Kato, Kamakura, JP;

Takashi Taira, Yokohama, JP;

Kenji Ishizuka, Yokohama, JP;

Yohji Watanabe, Yokohama, JP;

Munehiro Yoshida, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C007/00 ;
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor storage device in which only a defective element is replaced by a row redundant element to compensate for a defect if at least one of a plurality of elements is defective in a case where the plurality of elements in a memory cell array are simultaneously activated. The semiconductor storage device includes an array control circuit which is configured to interrupt the operation of the defective element by preventing a word line state signal from being received based on a signal to determine whether a row redundancy replacement process is performed or not. The word line state signal is input to the plurality of memory blocks in the cell array unit via a single signal line.


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