The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Nov. 25, 2002
J. Scott Martin, Garland, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Theodore S. Moise, Dallas, TX (US);
Kelly J. Taylor, Allen, TX (US);
Luigi Colombo, Dallas, TX (US);
Sanjeev Aggarwal, Plano, TX (US);
Sirisha Kuchimanchi, Dallas, TX (US);
K. R. Udayakumar, Dallas, TX (US);
Lindsey Hall, Plano, TX (US);
J. Scott Martin, Garland, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Theodore S. Moise, Dallas, TX (US);
Kelly J. Taylor, Allen, TX (US);
Luigi Colombo, Dallas, TX (US);
Sanjeev Aggarwal, Plano, TX (US);
Sirisha Kuchimanchi, Dallas, TX (US);
K. R. Udayakumar, Dallas, TX (US);
Lindsey Hall, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention forms sidewall diffusion barrier layer(s) that mitigate hydrogen contamination of ferroelectric capacitors. Sidewall diffusion barrier layer(s) of the present invention are formed via a physical vapor deposition process at a low temperature. By so doing, the sidewall diffusion barrier layer(s) are substantially amorphous and provide superior protection against hydrogen diffusion than conventional and/or crystalline sidewall diffusion barrier layers.