The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Aug. 29, 2002
Applicant:
David J. Keller, Boise, ID (US);
Inventor:
David J. Keller, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/40 ;
U.S. Cl.
CPC ...
Abstract
A technique for etching with a single layered patterned photomask at wavelengths of 193 nanometers or less. Specifically, a method for etching a bottom anti-reflectant coating layer that utilizes a combination of CF, CHF, and Oto produce a stabilized pattern in the photoresist layer. The etching process results in a structure with a defined pattern having minimal defects and that maintains integrity through the remainder of the etching. A second etching process implementing an etchant having a high dielectric to photoresist selectivity may be used to further etch underlying layers.