The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Sep. 27, 2002
Applicants:
Henry N. Chapman, Livermore, CA (US);
John S. Taylor, Livermore, CA (US);
Inventors:
Henry N. Chapman, Livermore, CA (US);
John S. Taylor, Livermore, CA (US);
Assignee:
EUV Limited Liability Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F009/00 ;
U.S. Cl.
CPC ...
Abstract
A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.