The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2005

Filed:

Sep. 27, 2002
Applicants:

Henry N. Chapman, Livermore, CA (US);

John S. Taylor, Livermore, CA (US);

Inventors:

Henry N. Chapman, Livermore, CA (US);

John S. Taylor, Livermore, CA (US);

Assignee:

EUV Limited Liability Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F009/00 ;
U.S. Cl.
CPC ...
Abstract

A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.


Find Patent Forward Citations

Chapman, Henry. (2005). Etched-multilayer phase shifting masks for euv lithography (U.S. Patent No. 6875543). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6875543

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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