The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2005

Filed:

Jul. 30, 2003
Applicants:

Takeshi Shioga, Kawasaki, JP;

Kazuaki Karasawa, Kawasaki, JP;

Kazuaki Kurihara, Kawasaki, JP;

Inventors:

Takeshi Shioga, Kawasaki, JP;

Kazuaki Karasawa, Kawasaki, JP;

Kazuaki Kurihara, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract

A capacitor comprises a first conducting filmformed on a substrate, a first dielectric filmformed on the first conducting film, a second conducting filmformed on the first dielectric film, a second dielectric filmformed above the second conducting film, covering the edge of the second conducting film, a third conducting filmformed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation filmcovering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.


Find Patent Forward Citations

Shioga, Takeshi. (2005). Capacitor and semiconductor device and method for fabricating the semiconductor device (U.S. Patent No. 6873038). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6873038

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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