The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Oct. 30, 2001
Hideo Wada, Tenri, JP;
Isamu Ohkubo, Kashiba, JP;
Kazuhiro Natsuaki, Sakurai, JP;
Naoki Fukunaga, Soraku-gun, JP;
Shigeki Hayashida, Kitakatsuragi-gun, JP;
Hideo Wada, Tenri, JP;
Isamu Ohkubo, Kashiba, JP;
Kazuhiro Natsuaki, Sakurai, JP;
Naoki Fukunaga, Soraku-gun, JP;
Shigeki Hayashida, Kitakatsuragi-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.