The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
May. 14, 2003
Jun Cai, Scarborough, ME (US);
Alvin Sugerman, Scarborough, ME (US);
Steven Park, Falmouth, ME (US);
Jun Cai, Scarborough, ME (US);
Alvin Sugerman, Scarborough, ME (US);
Steven Park, Falmouth, ME (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
Devicein FIG.has junctionseach with a lateral portionand a second portionextending upward toward the surfacefrom the lateral portion. The lateral portions, as illustrated in FIG., are more or less formed along a plane parallel with the surface. The upwardly extending portionsinclude characteristic curved edges of the diffusion fronts which are associated with the planar process. With the regionsandeach having relatively high net dopant concentrations of different conductivity types, each lateral junction portionincludes a relatively large sub regionwhich extends more deeply into the layer. When compared to other portions of the junctions, the subregionsare characterized by a relatively low breakdown voltage so that ESD current is initially directed vertically rather than laterally.