The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Apr. 11, 2003
Applicants:
Takashi Kano, Hirakata, JP;
Hiroki Ohbo, Hirakata, JP;
Inventors:
Takashi Kano, Hirakata, JP;
Hiroki Ohbo, Hirakata, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/06 ; H01L021/00 ;
U.S. Cl.
CPC ...
Abstract
In the manufacture of a semiconductor laser device, sequentially grown on a sapphire substrate in the following order are a buffer layer, a first undoped GaN layer, a first super lattice defect reducing layer, a second undoped GaN layer, a second super lattice defect reducing layer, a third undoped GaN layer, a third super lattice defect reducing layer and a fourth undoped GaN layer. A device structure is then formed thereon. The first to third super lattice defect reducing layers each include five pairs of InGaN and AlGaN films alternately placed on one another in this order.