The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Aug. 08, 2003
Chaoyong LI, Singapore, SG;
Dao Hua Zhang, Singapore, SG;
Chaoyong Li, Singapore, SG;
Dao Hua Zhang, Singapore, SG;
Agency for Science, Technology and Research, Singapore, SG;
Abstract
Copper seed layers for use in damascene structures are commonly deposited by CVD because of their superior step coverage. However, these films have poor adhesion to the barrier layer. This problem has been overcome by preceding the deposition of the CVD copper layer with a metal plasma treatment that lays down a very thin layer of copper while the structure receiving it is maintained at a temperature below about −40 C. This is followed by a short exposure to a nitrogen bearing plasma. The results is a seed layer having excellent step coverage as well as very good adhesion to the underlying barrier layer.