The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Dec. 13, 2002
Method or process for producing pzt films at low substrate temperatures by chemical vapor deposition
Hidekimi Kadokura, Tokyo, JP;
Yumie Okuhara, Uoshimi-machi, JP;
Hidekimi Kadokura, Tokyo, JP;
Yumie Okuhara, Uoshimi-machi, JP;
Kabushikikaisha Kojundokagaku Kenkyusho, Saitama, JP;
Abstract
A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr)(dibm)at a low substrate temperature of 450° C. or less in CVD. Starting materials are fed in a solution vaporization system. The starting materials, Ti (OiPr)(dibm), used as a T1 source, and a combination of Pb(dpm)-Zr(Oipr)(dpm)-Ti(OiPr)(dibm)in n-butyl acetate are vaporized and supplied at 200° C. The vaporized starting materials are fed into a chamber and subjected to CVD at a substrate temperature of 420° C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. Ti(OiPr)(dibm)has a melting point of 105° C., a high solubility and a vapor pressure of 1 Torr/150° C. and does not react with Pb(dpm), and a solution thereof in n-butyl acetate has a pot life of 3 months.