The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6869899 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 22, 2005

Filed:

Jul. 12, 2001
Applicants:

Arpan P. Mahorowala, Bronxville, NY (US);

Maheswaran Surendra, Croton-on-Hudson, NY (US);

Jung H. Yoon, Poughkeepsie, NY (US);

Ying Zhang, Yorktown Heights, NY (US);

Inventors:

Arpan P. Mahorowala, Bronxville, NY (US);

Maheswaran Surendra, Croton-on-Hudson, NY (US);

Jung H. Yoon, Poughkeepsie, NY (US);

Ying Zhang, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract

The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or next generation lithography techniques. The invention relates more particularly, but not by way of limitation, to lateral trimming of photoresist images.


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Mahorowala, Arpan. (2005). Lateral-only photoresist trimming for sub-80 nm gate stack (U.S. Patent No. 6869899). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6869899

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