The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Nov. 05, 2003
Applicants:
Zhizheng Liu, Sunnyvale, CA (US);
Yider Wu, Campbell, CA (US);
Jean Yee-mei Yang, Sunnyvale, CA (US);
Inventors:
Zhizheng Liu, Sunnyvale, CA (US);
Yider Wu, Campbell, CA (US);
Jean Yee-Mei Yang, Sunnyvale, CA (US);
Assignee:
Advanced Micro Device, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A structure for protecting an NROM from induced charge damage during device fabrication is described. The structure provides a discharge path for charge accumulated on the polygate layer during fabrication while providing sufficient isolation to ensure normal circuit operation.
Liu, Zhizheng. (2005). Method and structure for protecting nrom devices from induced charge damage during device fabrication (U.S. Patent No. 6869844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6869844
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile