The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Apr. 09, 2002
Kam Law, Union City, CA (US);
Quanyuan Shang, Saratoga, CA (US);
William Reid Harshbarger, San Jose, CA (US);
Dan Maydan, Los Altos Hills, CA (US);
Kam Law, Union City, CA (US);
Quanyuan Shang, Saratoga, CA (US);
William Reid Harshbarger, San Jose, CA (US);
Dan Maydan, Los Altos Hills, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.