The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2005

Filed:

Jul. 31, 2002
Applicants:

Hirokazu Yonezawa, Hyogo, JP;

Satoshi Ishikura, Osaka, JP;

Inventors:

Hirokazu Yonezawa, Hyogo, JP;

Satoshi Ishikura, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L031/26 ;
U.S. Cl.
CPC ...
Abstract

There are provided a method for evaluating, in a reduced number of steps, a property of an integrated circuit reflecting operating conditions for an actual LSI and the design of the LSI. The property (delay) of a circuit A (ring oscillator) in a wafer or mounted chip is measured actually or simulated and the property of a circuit B (LSI) is simulated. Then, the interrelation between the degree of property degradation of the circuit A and the degree of property degradation of the circuit B is determined. The circuit property of a circuit AA (ring oscillator) having substantially the same degree of property degradation as the circuit A and manufactured under a new manufacturing condition is measured actually or simulated so that the degree of property degradation of a circuit BB is predicted from the interrelation and the degree of property degradation of the circuit AA. The circuit BB has substantially the same degree of property degradation as the circuit B and is manufactured under a new manufacturing condition.


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