The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Sep. 09, 2002
Kwang-myung Lee, Suwon-si, KR;
Mikio Takagi, Suwon-si, KR;
Jae-hyuk an, Suwon-si, KR;
Seung-ki Chae, Seoul, KR;
Jea-wook Kim, Seoul, KR;
Kwang-Myung Lee, Suwon-si, KR;
Mikio Takagi, Suwon-si, KR;
Jae-Hyuk An, Suwon-si, KR;
Seung-Ki Chae, Seoul, KR;
Jea-Wook Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.