The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Mar. 11, 2003
Applicants:
Hideto Hidaka, Hyogo, JP;
Masatoshi Ishikawa, Hyogo, JP;
Tsukasa Ooishi, Hyogo, JP;
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C011/14 ;
U.S. Cl.
CPC ...
Abstract
An access transistor ATR in an MTJ memory cell, which is one of transistors connected to a read current path, is constituted with a surface-channel, field-effect transistor. The surface-channel, field-effect transistor has a channel resistance lower than a channel-embedded, field-effect transistor, and can reduce an RC load in the read current path. Accordingly, data can be read with a high speed.