The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Jun. 10, 2003
Yu-wei Lee, Taichung, TW;
Sheau-yung Shyu, Hsinchu, TW;
Chih-hung Wu, Kaohsiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A read only memory device includes multiple word lines, a first and second main bit line GL (n) and BL (n), sub-bit lines SB(n) to SB(n), selection switches MB(n) to MB(n), and memory cells M(n) to M(n). The memory cells M(n) to M(n) are electrically coupled to the sub-bit lines SB(n) to SB(n) and the sub-bit line SB(n+1), respectively. When the memory cell M(n) which is connected to SB(n) is read, the sub-bit lines SB(n) to SB(n) are connected to the corresponding main bit lines through the turned selection switches. At this time, the sub-bit lines SB(n) to SB(n) are not floating but are all at the same high voltage level. Therefore, the capacitance effect will not exist between them to change the voltage level of the sub-bit lines quickly.