The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Jun. 19, 2003
Applicant:
Yasuhiko Tsukikawa, Hyogo, JP;
Inventor:
Yasuhiko Tsukikawa, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C005/06 ; G11C011/04 ; G11C007/00 ; G11C007/02 ;
U.S. Cl.
CPC ...
Abstract
A field region forming a transistor is provided in a direction crossing a word line and a bit line. A bit line contact is provided corresponding to each bit line in a row direction. Storage node contacts are provided in alignment corresponding to respective columns in the row direction. The size of a basic cell region for forming a single memory cell can be set to 2·F·3·F. Here, F represents a minimum design size. Accordingly, memory cells in a twin cell mode DRAM storing one bit of data with two memory cells can be reduced in size.