The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Oct. 23, 2002
Shinichiro Hayashi, Takatsuki, JP;
Vikram Joshi, Colorado Springs, CO (US);
Narayan Solayappan, Colorado Springs, CO (US);
Joseph D. Cuchiaro, Colorado Springs, CO (US);
Carlos A. Paz DE Araujo, Colorado Springs, CO (US);
Shinichiro Hayashi, Takatsuki, JP;
Vikram Joshi, Colorado Springs, CO (US);
Narayan Solayappan, Colorado Springs, CO (US);
Joseph D. Cuchiaro, Colorado Springs, CO (US);
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Symetrix Corporation, Colorodo Springs, CO (US);
Matsushita Electric Industrial Co., Ltd., Colorado Springs, CO (US);
Abstract
A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of BiOwith an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas ABO, ABOand ABiBO, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaSr)(TaNb)O, where 0≦y≦1.0 and 0≦y≦1.0; (BaSr)(TaNb)O, where 0≦x≦1.0 and 0≦y≦1.0; and (BaSr)Bi(TaNb)O, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000 ppm, preferably <100.