The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Aug. 20, 2002
Tetsuo Takahashi, Hyogo, JP;
Katsumi Nakamura, Hyogo, JP;
Tadaharu Minato, Hyogo, JP;
Masana Harada, Hyogo, JP;
Tetsuo Takahashi, Hyogo, JP;
Katsumi Nakamura, Hyogo, JP;
Tadaharu Minato, Hyogo, JP;
Masana Harada, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A pin diode is formed by a pcollector region, an n type buffer region, an nregion and an ncathode region. A trench is formed from the surface of ncathode region through ncathode region to reach nregion. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of ncathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to ncathode region. An anode electrode is formed to be electrically connected to pcollector region. The ncathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.