The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Oct. 29, 1999
Hiroyuki Ito, Narita, JP;
Hiroshi Asechi, Narita, JP;
Hiroyuki Ito, Narita, JP;
Hiroshi Asechi, Narita, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An ion implantation apparatus comprises an ion source section () for generating ions; an ion implantation section () for implanting the ions generated in the ion source section (), in a substrate (); a charged particle generator () for generating charged particles having a charge opposite to that of the ions; a beam guide section () having an inlet aperture () for accepting the ions from the ion source section (), an outlet aperture () for delivering the ions into the ion implantation section (), a guide tube () extending from the inlet aperture () to the outlet aperture (), and an introducing section () having an opening () thereof in an internal surface () of the guide tube (), for introducing the charged particles from the charged particle generator () into the guide tube (); and a shield section () located between the opening () of the introducing section () and the outlet aperture () inside the guide tube (). A shield surface () of the shield section () blocks the charged particles' reaching the wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile