The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Mar. 28, 2001
Applicant:
Mikio Takagi, Kawasaki, JP;
Inventor:
Mikio Takagi, Kawasaki, JP;
Assignee:
F.T.L. Co., LTD, Lawasalo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ; H01L021/461 ;
U.S. Cl.
CPC ...
Abstract
A method of removing native oxide film from contact holes of a semiconductor device by using a microwave-excited reactive gas. The method increases throughput. Reactive gas is introduced substantially horizontally into the reactor () by way of a chamber () arranged as an extension thereof in the vertical direction of the reactor () and showing an internal pressure higher than that of the reactor, while the plurality of semiconductor silicon wafers () that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said reactor is heated () to above 373 K.