The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Jun. 05, 2002
Tomoko Wake, Tokyo, JP;
Tomoko Wake, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device manufacturing method wherein a via-hole is formed in an second inter-layer insulating film covering a lower layer wiring, throughout a surface of which are then formed a barrier film made of Ta (tantalum) and a Cu (copper) film sequentially, after which, first an unnecessary part of the Cu film is removed by a CMP (Chemical Mechanical Polishing) method using such a polishing liquid to which hydrogen peroxide is added by 1.5 weight-percent or more (first polishing step) and then an unnecessary part of the barrier film is removed by a CMP method for using a polishing liquid to which hydrogen peroxide is added by 0.09-1.5 weight-percent and applying a pressure of 4-10 Psi (pounds per square inch) on the barrier film (second polishing step).