The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2005

Filed:

Dec. 20, 2000
Applicants:

Shi-tron Lin, Taipei, TW;

Wei-fan Chen, Taichung, TW;

Chenhsin Lien, Hsinchu, TW;

Wan-yun Lin, Taipei, TW;

Inventors:

Shi-Tron Lin, Taipei, TW;

Wei-Fan Chen, Taichung, TW;

Chenhsin Lien, Hsinchu, TW;

Wan-Yun Lin, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L023/62 ; H01L029/76 ;
U.S. Cl.
CPC ...
Abstract

An electrostatic discharge (ESD) protection device includes a semiconductor layer, a source region formed in the layer, a drain region formed in the layer, a channel region in the layer between the source and drain regions, and a gate over the channel region. A plurality of current divider segments are distributed on the drain region and extend between the gate and drain contacts. The segments can be formed of polysilicon or a field oxide.


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