The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Jun. 28, 2002
Jörg Butschke, Stuttgart, DE;
Albrecht Ehrmann, Krailling, DE;
Karl Kragler, Erlangen, DE;
Florian Letzkus, Tübingen, DE;
Christian Reuter, Unter Teck, DE;
Reinhard Springer, Sulz, DE;
Jörg Butschke, Stuttgart, DE;
Albrecht Ehrmann, Krailling, DE;
Karl Kragler, Erlangen, DE;
Florian Letzkus, Tübingen, DE;
Christian Reuter, Unter Teck, DE;
Reinhard Springer, Sulz, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.