Fabrication of dual work-function metal gate structure for complementary field effect transistors

Abstract

For fabricating dual gate structures of complementary field effect transistors, a gate material is deposited into an opening disposed over a P-well and an N-well having the complementary field effect transistors formed therein. A portion of the gate material disposed over one of the P-well or the N-well is modified to form a first gate structure, and the remaining gate material over the other one of the P-well or the N-well forms a second gate structure. The first and second gate structures form the dual gate structures of the complementary field effect transistors.