The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Feb. 24, 2003
Jun-kyu Cho, Gwangju-shi, KR;
Si-young Choi, Gyeonggi-do, KR;
Sun-pil Youn, Seoul, KR;
Sung-man Kim, Seoul, KR;
Ja-hum Ku, Gyeonggi-do, KR;
Jun-Kyu Cho, Gwangju-shi, KR;
Si-Young Choi, Gyeonggi-do, KR;
Sun-Pil Youn, Seoul, KR;
Sung-Man Kim, Seoul, KR;
Ja-Hum Ku, Gyeonggi-do, KR;
Abstract
Integrated circuit gates are fabricated by forming an insulated gate on an integrated circuit substrate, wherein the insulated gate includes a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern. The insulated gate is pretreated with hydrogen and nitrogen gasses. The polysilicon sidewalls are then oxidized. The pretreating in hydrogen and nitrogen gasses prior to oxidizing can reduce growth in thickness of the gate oxide during the oxidizing and/or can reduce formation of whiskers on the metal pattern, compared to absence of the pretreatment.