The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Jun. 25, 2002
Jun Hatakeyama, Niigata-ken, JP;
Yuji Harada, Niigata-ken, JP;
Yoshio Kawai, Niigata-ken, JP;
Masaru Sasago, Osaka, JP;
Masayuki Endo, Osaka, JP;
Shinji Kishimura, Hyogo-ken, JP;
Michitaka Ootani, Saitama-ken, JP;
Satoru Miyazawa, Saitama-ken, JP;
Kentaro Tsutsumi, Saitama-ken, JP;
Kazuhiko Maeda, Tokyo, JP;
Jun Hatakeyama, Niigata-ken, JP;
Yuji Harada, Niigata-ken, JP;
Yoshio Kawai, Niigata-ken, JP;
Masaru Sasago, Osaka, JP;
Masayuki Endo, Osaka, JP;
Shinji Kishimura, Hyogo-ken, JP;
Michitaka Ootani, Saitama-ken, JP;
Satoru Miyazawa, Saitama-ken, JP;
Kentaro Tsutsumi, Saitama-ken, JP;
Kazuhiko Maeda, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Matsushita Electric Industrial Co. Ltd., Osaka, JP;
Central Glass Co., Ltd., Yamaguchi-ken, JP;
Abstract
A copolymer of an acrylic monomer having at least one Calicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.