The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Jul. 20, 2000
Maik Wiemer, Limbach Oberfrohna, DE;
Karla Hiller, Loessnitz, DE;
Detlef Billep, Chemnitz, DE;
Uwe Breng, Gundelfingen, DE;
Bruno Rvrko, Reute, DE;
Eberhard Handrich, Kirchzarten, DE;
Maik Wiemer, Limbach Oberfrohna, DE;
Karla Hiller, Loessnitz, DE;
Detlef Billep, Chemnitz, DE;
Uwe Breng, Gundelfingen, DE;
Bruno Rvrko, Reute, DE;
Eberhard Handrich, Kirchzarten, DE;
LITEF GmbH, Freiburg im Breisgau, DE;
Abstract
A method for producing a silicon torsion spring capable, for example, of reading the rotation rate in a microstructured torsion spring/mass system. The system that is produced achieves a low torsional stiffness compared to a relatively high transverse stiffness in the lateral and vertical directions. The method proceeds from a wafer or wafer composite and, upon suitable mask coverage, a spring with a V-shaped cross section is formed by anisotropic wet-chemical etching which preferably extends over the entire wafer thickness and is laterally delimited only by [111] planes. Two of the wafers or wafer composites prepared in this way are rotated through 180° and joined to one another oriented mirrorsymmetrically with respect to one another, so that overall the desired X-shaped cross section is formed.