The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Mar. 19, 2003
Shih-hsien Yang, Hsinchu, TW;
Chien-min Wu, Hsinchu, TW;
James Juen Hsu, Saratoga, CA (US);
Chi-moon Huang, Hsinchu, TW;
Shih-Hsien Yang, Hsinchu, TW;
Chien-Min Wu, Hsinchu, TW;
James Juen Hsu, Saratoga, CA (US);
Chi-Moon Huang, Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A weak programming method of a non-volatile memory. A first voltage is applied to a substrate during a first duration, while a control-gate voltage, such as zero volt, is applied to the gate, such that the leakage of the bit line is reduced and electron-hole pairs are generated. In the second duration, a second voltage is applied to the substrate, and a third voltage is applied to the gate to enhance the capability of injecting electrons into the floating gate of the non-volatile memory. Therefore, the distribution of the threshold voltage is more concentrated. The second voltage has a polarity the same as that of the first voltage, while the polarity of the third voltage is opposite to that of the second voltage.