The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Feb. 11, 2003
Applicants:
Hideto Hidaka, Hyogo, JP;
Masatoshi Ishikawa, Hyogo, JP;
Tsukasa Ooishi, Hyogo, JP;
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C011/00 ; G11C011/14 ; G11C011/15 ;
U.S. Cl.
CPC ...
Abstract
An access transistor in an MTJ memory cell, which is one of transistors connected to a read current path, is fabricated with a semiconductor layer formed on an insulating film on a semiconductor substrate SUB, and includes impurity regions, a gate region and a body region. That is, the access transistor is fabricated with an SOI (Silicon On Insulator) structure in order to reduce an off-leak current.