The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Jun. 27, 2003
Yoshihisa Matsubara, Kanagawa, JP;
Masahiro Komuro, Kanagawa, JP;
Manabu Iguchi, Kanagawa, JP;
Takahiro Onodera, Kanagawa, JP;
Norio Okada, Kanagawa, JP;
Yoshihisa Matsubara, Kanagawa, JP;
Masahiro Komuro, Kanagawa, JP;
Manabu Iguchi, Kanagawa, JP;
Takahiro Onodera, Kanagawa, JP;
Norio Okada, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor apparatus includes an under layer, a first insulating layer and a first conductive portion. The under layer is formed above a substrate. The first insulating layer is formed on the under layer. The first conductive portion is formed in a first concave portion which passes through the first insulating layer to the under layer. The first conductive portion includes a first barrier metal layer and a first metal portion. The first barrier metal layer is formed on a side wall and a bottom surface of the first concave portion. The first metal portion is formed on the first barrier metal layer such that the rest of the first concave portion is filled with the first metal portion. The first metal portion includes a first alloy including copper and aluminium.