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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6861614 B1

PDFFull Text
Date of Patent:
Mar. 01, 2005

Filed:

Jul. 07, 2000

S system for the formation of a silicon thin film and a semiconductor-insulating film interface

Applicants:

Hiroshi Tanabe, Tokyo, JP;

Tomoyuki Akashi, Tokyo, JP;

Yoshimi Watabe, Tokyo, JP;

Inventors:

Hiroshi Tanabe, Tokyo, JP;

Tomoyuki Akashi, Tokyo, JP;

Yoshimi Watabe, Tokyo, JP;

Assignees:

NEC Corporation, , JP;

Sumitomo Heavy Industries, Ltd., , JP;

Anelva Corporation, , JP;

Attorney:

Hayes Soloway P.C.

Primary Examiner:

Geoffrey S Evans

Int. Cl.
CPC ...
H01L021/00 ; B23K026/06 ;
U.S. Cl.
CPC ...
Abstract

In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20') for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cmand can provide a silicon-insulating film interface exhibiting a low interface state density.

Find Patent Forward Citations

Tanabe, Hiroshi. (2005). S system for the formation of a silicon thin film and a semiconductor-insulating film interface (U.S. Patent No. 6861614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6861614

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