The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Oct. 10, 2002
Dian-hau Chen, Hsinchu, TW;
Ruei-je Shiu, Tainan, TW;
Juei-kuo Wu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Hsin-Chu, TW;
Abstract
An improved method of forming a dual damascene structure by a via first process is described. Via holes are formed in a damascene stack consisting of an etch stop layer, a dielectric layer, and a barrier layer. An i-line photoresist is coated on the substrate and fills the vias. An e-beam curing step is performed to render the photoresist components inactive towards adjacent layers. The photoresist is etched back to a level about 1600 Angstroms above the via bottom to form a plug. A second curing step may be performed and then a Deep UV resist is preferably coated and patterned to form a trench opening above the vias. There is no interaction between the Deep UV photoresist and the cured plug which thereby prevents scum or bridging defects from occurring. Fences during trench etch are avoided. Plug stabilization also prevents voids from forming during trench patterning.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile