The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Aug. 17, 2000
Hiroaki Nakaoka, Kyoto, JP;
Atsushi Ishinaga, Osaka, JP;
Hiroko Kubo, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride film and produce a steeply sloped distribution of nitrogen. A semiconductor film containing an impurity, such as an amorphous silicon film, is formed on the silicon oxynitride film. By forming a CMOS device with, in particular, a dual gate structure which comprises p-type and n-type MIS transistors each having a gate oxide film composed of the silicon oxynitride film and a gate electrode composed of a polysilicon film, a high driving force is provided, while boron penetration in the p-type MIS transistor is suppressed.