The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Jun. 19, 2003
Minh Van Ngo, Fremont, CA (US);
Christy Mei-chu Woo, Cupertino, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
James Pan, Fishkill, NY (US);
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Christy Mei-Chu Woo, Cupertino, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
James Pan, Fishkill, NY (US);
Paul R. Besser, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Micro-miniaturized semiconductor devices are fabricated with silicon-rich tantalum silicon nitride replacement metal gate electrodes. Embodiments include removing a removable gate, depositing a layer of tantalum nitride, as by PVD at a thickness of 25 Å to 75 Å, and then introducing silicon into the deposited tantalum nitride layer by thermal soaking in silane or silane plasma treatment to form a layer of silicon-rich tantalum silicon nitride. In another embodiment, the intermediate structure is subjected to thermal soaking in silane or silane plasma treatment before and after depositing the tantalum nitride layer. Embodiments further include pretreating the intermediate structure with silane prior to depositing the tantalum nitride layer, treating the deposited tantalum nitride layer with silane, and repeating these steps a number of times to form a plurality of sub-layers of silicon-rich tantalum silicon nitride.