The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Apr. 04, 2003
Alexander Usenko, Murray Hill, NJ (US);
Alexander Usenko, Murray Hill, NJ (US);
Silicon Wafer Technologies, Inc., Newark, NJ (US);
Abstract
The invention provides a method of making silicon-on-insulator SOI substrates with nitride buried insulator layer by implantation of molecular deuterated ammonia ions ND, instead of implanting nitrogen ions (N, or N) as is done in prior art nitride SOI processes. The resultant structure, after annealing, has a buried insulator with a defect density which is substantially lower than in prior art nitride SOI. The deuterated nitride SOI substrates allow much better heat dissipation than SOI with a silicon dioxide buried insulator. These substrates can be used for manufacturing of high speed and high power dissipation monolithic integrated circuits.