The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Aug. 21, 2001
Applicant:
Miho Iwabuchi, Fukushima, JP;
Inventor:
Miho Iwabuchi, Fukushima, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/66 ;
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for inspecting a silicon wafer making it possible to identify and efficiently detect a new defect affecting a device fabricating process, a method for manufacturing a silicon wafer enabling manufacture of wafers not having the defect, a method for fabricating a semiconductor device using the silicon wafer not having this defect, and the silicon wafer not having the defect. When a silicon wafer is inspected, inspection is made for a defect having the entire defect size of 0.5 μm or more in which microdefects gather in a colony state.