The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Feb. 28, 2002
Yuji Harada, Nakakubiki-gun, JP;
Jun Watanabe, Nakakubiki-gun, JP;
Jun Hatakeyama, Nakakubiki-gun, JP;
Yoshio Kawai, Nakakubiki-gun, JP;
Masaru Sasago, Hirakata, JP;
Masayuki Endo, Izumi, JP;
Shinji Kishimura, Itami, JP;
Michitaka Ootani, Kawagoe, JP;
Satoru Miyazawa, Kawagoe, JP;
Kentaro Tsutsumi, Kawagoe, JP;
Kazuhiko Maeda, Chiyoda-ku, JP;
Yuji Harada, Nakakubiki-gun, JP;
Jun Watanabe, Nakakubiki-gun, JP;
Jun Hatakeyama, Nakakubiki-gun, JP;
Yoshio Kawai, Nakakubiki-gun, JP;
Masaru Sasago, Hirakata, JP;
Masayuki Endo, Izumi, JP;
Shinji Kishimura, Itami, JP;
Michitaka Ootani, Kawagoe, JP;
Satoru Miyazawa, Kawagoe, JP;
Kentaro Tsutsumi, Kawagoe, JP;
Kazuhiko Maeda, Chiyoda-ku, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Central Glass Co., Ltd., Ube, JP;
Abstract
A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a Flaser and is ideal as a micropatterning material in VLSI fabrication.