The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6859384 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 22, 2005

Filed:

Jun. 20, 2002
Applicant:

Shigeki Tomishima, Hyogo, JP;

Inventor:

Shigeki Tomishima, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C011/24 ;
U.S. Cl.
CPC ...
Abstract

An active region which forms two transistors included in a memory cell is arranged to have a strip shape along a predetermined axis crossing first and second bit lines at less than 90 degrees, whereby it is possible to reduce a junction area corresponding to a connection node of connecting the two transistors between the active region and a substrate and to reduce a leak current.


Find Patent Forward Citations

Tomishima, Shigeki. (2005). Semiconductor memory device having two-transistor, one-capacitor type memory cells of high data holding characteristic (U.S. Patent No. 6859384). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6859384

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