The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Jan. 28, 2003
Yasutoshi Kawaguchi, Kadoma, JP;
Akihiko Ishibashi, Sakai, JP;
Ayumu Tsujimura, Osaka, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Yasutoshi Kawaguchi, Kadoma, JP;
Akihiko Ishibashi, Sakai, JP;
Ayumu Tsujimura, Osaka, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.