The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Jan. 17, 2003
Terry G. Sparks, Austin, TX (US);
Ajay Singhal, Round Rock, TX (US);
Kirk J. Strozewski, Round Rock, TX (US);
Terry G. Sparks, Austin, TX (US);
Ajay Singhal, Round Rock, TX (US);
Kirk J. Strozewski, Round Rock, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor fabrication method that includes forming a film () comprising an imaging layer () and an under layer () over a semiconductor substrate (). The imaging layer () is patterned to produce a printed feature () having a printed dimension (). The under layer () is then processed to produce a sloped sidewall void () in the under layer () wherein the void () has a finished dimension () in proximity to the underlying substrate that is less than the printed dimension. Processing the under layer () may include exposing the wafer to high density low pressure Nplasma.